TPC8A05-H(TE12L,QM
The pictures are for reference only
likeTPC8A05-H(TE12L,QM
Brand：Toshiba
Model：TPC8A05-H(TE12L,QM
stock：71926
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price:
The market price fluctuates. Please consult the customer service for the actual price
Similar Product
product details
Common problem
Industry trends
| Installation type | Surface mount |
| packing | TR |
| series | U-MOSV-H |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | 8-SOP(5.5x6.0) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 10A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 13.3 mΩ @ 5A,10V |
| Vgs (th) (maximum) for different Ids | 2.3V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 15 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 1700 pF @ 10 V |
| FET function | Schottky diode |
| Power dissipation (maximum) | 1W(Ta) |
Common problem
Industry trends
Trelleborg will showcase its latest semiconductor Subfab solution at SEMICON Taiwan 2022
HMA82GR7DJR8N-XN Hynix DDR4 3200 16G RDIMM server memory
HMA82GR7DJR4N-XN Hynix DDR4 3200 16GB server memory module
SK Hynix successfully developed 238 layers of NAND flash memory
Advantages of Micron memory chips (why micron chips are recommended)
M393A4G43AB3-CVF Samsung DDR4 2933 RDIMM 32G server memory
Expected 15%-20% decline in NAND Flash prices in the fourth quarter
Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
he vice chairman of the flash memory famous company Kioxia warned of "decoupling" from China: the cost is high!
MTA18ASF4G72PDZ-3G2E1 MG DDR4 3200 32GB RDIMM server memory module
Hot Products
_SOT226%20Pkg.jpg
)
Offer
