TK14C65W5,S1Q
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likeTK14C65W5,S1Q
Brand：Toshiba
Model：TK14C65W5,S1Q
stock：14278
Store：ShenZhen/Hongkong
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| Installation type | Through-Hole |
| packing | pipe |
| series | DTMOSIV |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | I2PAK |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 13.7A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 300 mΩ @ 6.9A,10V |
| Vgs (th) (maximum) for different Ids | 4.5V @ 690µA |
| Gate charge (Qg) at different Vgs (maximum) | 40 nC @ 10 V |
| Vgs (max) | ±30V |
| Input capacitance at different Vds (Ciss) (maximum) | 1300 pF @ 300 V |
| FET function | - |
| Power dissipation (maximum) | 130W(Tc) |
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