TPCC8093,L1Q
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likeTPCC8093,L1Q
Brand：Toshiba
Model：TPCC8093,L1Q
stock：46552
Store：ShenZhen/Hongkong
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DataSheet
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| Installation type | Surface mount |
| packing | TR |
| series | U-MOSVII |
| Part status | stop production |
| working temperature | 150°C |
| Encapsulation/Housing | 8-TSON Advance(3.1x3.1) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 21A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 5.8 mΩ @ 10.5A,4.5V |
| Vgs (th) (maximum) for different Ids | 1.2V @ 500µA |
| Gate charge (Qg) at different Vgs (maximum) | 16 nC @ 5 V |
| Vgs (max) | ±12V |
| Input capacitance at different Vds (Ciss) (maximum) | 1860 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 1.9W(Ta),30W(Tc) |
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