TPCC8105,L1Q(CM
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likeTPCC8105,L1Q(CM
Brand：Toshiba
Model：TPCC8105,L1Q(CM
stock：83030
Store：ShenZhen/Hongkong
DataSheet：
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product details
Common problem
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| Installation type | Surface mount |
| packing | TR |
| series | U-MOSVI |
| Part status | On sale |
| working temperature | 150°C |
| Encapsulation/Housing | 8-TSON Advance(3.3x3.3) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 23A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 7.8 mΩ @ 11.5A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 500µA |
| Gate charge (Qg) at different Vgs (maximum) | 76 nC @ 10 V |
| Vgs (max) | +20V,-25V |
| Input capacitance at different Vds (Ciss) (maximum) | 3240 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 700mW(Ta),30W(Tc) |
Common problem
Industry trends
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