TK40J20D,S1F(O
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likeTK40J20D,S1F(O
Brand：Toshiba
Model：TK40J20D,S1F(O
stock：15606
Store：ShenZhen/Hongkong
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| Installation type | Through-Hole |
| packing | pallet |
| series | π-MOSVIII |
| Part status | On sale |
| working temperature | 150°C |
| Encapsulation/Housing | TO-3P(N) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 200 V |
| Current at 25 ° C - continuous drain (Id) | 40A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 44 mΩ @ 20A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 100 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 4300 pF @ 100 V |
| FET function | - |
| Power dissipation (maximum) | 260W(Tc) |
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