ISC058N04NM5ATMA1
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ISC058N04NM5ATMA1
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ISC058N04NM5ATMA1

Brand:Infineon
Model:ISC058N04NM5ATMA1
stock:9523
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.78
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series OptiMOS™-5
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TDSON-8 FL
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 17A(Ta),63A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 7V,10V
On resistance (maximum) for different Ids and Vgs 5.8 mΩ @ 31A,10V
Vgs (th) (maximum) for different Ids 3.4V @ 13µA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1100 pF @ 20 V
FET function -
Power dissipation (maximum) 3W(Ta),42W(Tc)
Common problem
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