SPD15P10PLGBTMA1
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SPD15P10PLGBTMA1
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SPD15P10PLGBTMA1

Brand:Infineon
Model:SPD15P10PLGBTMA1
stock:14941
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥3.30
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series SIPMOS®
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 15A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 200 mΩ @ 11.3A,10V
Vgs (th) (maximum) for different Ids 2V @ 1.54mA
Gate charge (Qg) at different Vgs (maximum) 62 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1490 pF @ 25 V
FET function -
Power dissipation (maximum) 128W(Tc)
Common problem
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