IQE008N03LM5CGATMA1
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IQE008N03LM5CGATMA1
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IQE008N03LM5CGATMA1

Brand:Infineon
Model:IQE008N03LM5CGATMA1
stock:74198
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥3.75
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount,Wettable wings
packing TR,CT
series OptiMOS™
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TTFN-9-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 27A(Ta),253A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 850µ Ω @ 20A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 64 nC @ 10 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 5700 pF @ 15 V
FET function -
Power dissipation (maximum) 2.1W(Ta),89W(Tc)
Common problem
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