IPA80R1K4P7XKSA1
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IPA80R1K4P7XKSA1
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IPA80R1K4P7XKSA1

Brand:Infineon
Model:IPA80R1K4P7XKSA1
stock:11585
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥2.43
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series CoolMOS™
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TO220-3-31
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 800 V
Current at 25 ° C - continuous drain (Id) 4A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1.4 Ω @ 1.4A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 700µA
Gate charge (Qg) at different Vgs (maximum) 10 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 250 pF @ 500 V
FET function Grade knot
Power dissipation (maximum) 24W(Tc)
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