IPB90N06S4L04ATMA2
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IPB90N06S4L04ATMA2
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IPB90N06S4L04ATMA2

Brand:Infineon
Model:IPB90N06S4L04ATMA2
stock:40861
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥3.69
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series Automotive, AEC-Q101, OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-3-2
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 90A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 3.7 mΩ @ 90A,10V
Vgs (th) (maximum) for different Ids 2.2V @ 90µA
Gate charge (Qg) at different Vgs (maximum) 170 nC @ 10 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 13000 pF @ 25 V
FET function -
Power dissipation (maximum) 150W(Tc)
Common problem
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