Installation type | Surface mount |
packing | TR,CT |
series | HEXFET® |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | Micro3™/SOT-23 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 1.2A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.7V,4.5V |
On resistance (maximum) for different Ids and Vgs | 250 mΩ @ 930mA,4.5V |
Vgs (th) (maximum) for different Ids | 700mV @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 3.9 nC @ 4.5 V |
Vgs (max) | ±12V |
Input capacitance at different Vds (Ciss) (maximum) | 110 pF @ 15 V |
FET function | - |
Power dissipation (maximum) | 540mW(Ta) |