IAUT200N08S5N023ATMA1
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likeIAUT200N08S5N023ATMA1
Brand：Infineon
Model：IAUT200N08S5N023ATMA1
stock：24998
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥7.17
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | OptiMOS™-5 |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-HSOF-8-1 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 80 V |
| Current at 25 ° C - continuous drain (Id) | 200A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
| On resistance (maximum) for different Ids and Vgs | 2.3 mΩ @ 100A,10V |
| Vgs (th) (maximum) for different Ids | 3.8V @ 130µA |
| Gate charge (Qg) at different Vgs (maximum) | 110 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 7670 pF @ 40 V |
| FET function | - |
| Power dissipation (maximum) | 200W(Tc) |
Common problem
Industry trends
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