Installation type | Surface mount |
packing | TR,CT |
series | CoolSiC™ |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PG-TO263-7-13 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 1700 V |
Current at 25 ° C - continuous drain (Id) | 5.2A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 12V,15V |
On resistance (maximum) for different Ids and Vgs | 1000mΩ @ 1A,15V |
Vgs (th) (maximum) for different Ids | 5.7V @ 1.1mA |
Gate charge (Qg) at different Vgs (maximum) | 5 nC @ 12 V |
Vgs (max) | +20V,-10V |
Input capacitance at different Vds (Ciss) (maximum) | 275 pF @ 1000 V |
FET function | - |
Power dissipation (maximum) | 68W(Tc) |