Installation type | Through-Hole |
packing | bulk,pipe |
series | Automotive, AEC-Q101, CoolSiC™ |
Part status | On sale |
working temperature | -40°C ~ 175°C(TJ) |
Encapsulation/Housing | PG-TO247-3 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 1200 V |
Current at 25 ° C - continuous drain (Id) | 52A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | - |
On resistance (maximum) for different Ids and Vgs | 59 mΩ @ 20A,15V |
Vgs (th) (maximum) for different Ids | 5.7V @ 10mA |
Gate charge (Qg) at different Vgs (maximum) | 57 nC @ 15 V |
Vgs (max) | +20V,-7V |
Input capacitance at different Vds (Ciss) (maximum) | 2130 pF @ 800 V |
FET function | - |
Power dissipation (maximum) | 228W(Tc) |