BSP322PH6327XTSA1
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BSP322PH6327XTSA1
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BSP322PH6327XTSA1

Brand:Infineon
Model:BSP322PH6327XTSA1
stock:88899
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.44
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series SIPMOS®
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-SOT223-4
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 1A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 800 mΩ @ 1A,10V
Vgs (th) (maximum) for different Ids 1V @ 380µA
Gate charge (Qg) at different Vgs (maximum) 16.5 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 372 pF @ 25 V
FET function -
Power dissipation (maximum) 1.8W(Ta)
Common problem
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