IPA60R190P6XKSA1
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IPA60R190P6XKSA1
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IPA60R190P6XKSA1

Brand:Infineon
Model:IPA60R190P6XKSA1
stock:51921
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥4.66
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing bulk,pipe
series CoolMOS™ P6
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TO220-FP
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 20.2A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 190 mΩ @ 7.6A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 630µ
Gate charge (Qg) at different Vgs (maximum) 37 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1750 pF @ 100 V
FET function -
Power dissipation (maximum) 34W(Tc)
Common problem
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