IMBF170R450M1XTMA1
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likeIMBF170R450M1XTMA1
Brand：Infineon
Model：IMBF170R450M1XTMA1
stock：17285
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥12.88
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Surface mount |
| packing | TR,CT |
| series | CoolSiC™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO263-7-13 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1700 V |
| Current at 25 ° C - continuous drain (Id) | 9.8A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 12V,15V |
| On resistance (maximum) for different Ids and Vgs | 450mΩ @ 2A,15V |
| Vgs (th) (maximum) for different Ids | 5.7V @ 2.5mA |
| Gate charge (Qg) at different Vgs (maximum) | 11 nC @ 12 V |
| Vgs (max) | +20V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 610 pF @ 1000 V |
| FET function | - |
| Power dissipation (maximum) | 107W(Tc) |
Common problem
Industry trends
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