IMW120R220M1HXKSA1
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IMW120R220M1HXKSA1
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IMW120R220M1HXKSA1

Brand:Infineon
Model:IMW120R220M1HXKSA1
stock:66667
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥11.41
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series CoolSiC™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO247-3-41
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 1200 V
Current at 25 ° C - continuous drain (Id) 13A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 15V,18V
On resistance (maximum) for different Ids and Vgs 286 mΩ @ 4A,18V
Vgs (th) (maximum) for different Ids 5.7V @ 1.6mA
Gate charge (Qg) at different Vgs (maximum) 8.5 nC @ 18 V
Vgs (max) +23V,-7V
Input capacitance at different Vds (Ciss) (maximum) 289 pF @ 800 V
FET function -
Power dissipation (maximum) 75W(Tc)
Common problem
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