Installation type | Through-Hole |
packing | pipe |
series | CoolMOS™ |
Part status | Not applicable to new design |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | PG-TO220-3 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 600 V |
Current at 25 ° C - continuous drain (Id) | 37.9A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 99 mΩ @ 18.1A,10V |
Vgs (th) (maximum) for different Ids | 3.5V @ 1.21mA |
Gate charge (Qg) at different Vgs (maximum) | 119 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 2660 pF @ 100 V |
FET function | - |
Power dissipation (maximum) | 278W(Tc) |