IPP410N30NAKSA1
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IPP410N30NAKSA1
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IPP410N30NAKSA1

Brand:Infineon
Model:IPP410N30NAKSA1
stock:92454
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥14.76
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Through-Hole
packing pipe
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO220-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 300 V
Current at 25 ° C - continuous drain (Id) 44A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 41 mΩ @ 44A,10V
Vgs (th) (maximum) for different Ids 4V @ 270µA
Gate charge (Qg) at different Vgs (maximum) 87 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 7180 pF @ 100 V
FET function -
Power dissipation (maximum) 300W(Tc)
Common problem
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