Installation type | Surface mount |
packing | TR,CT |
series | CoolMOS™ |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | PG-TO252-3 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 800 V |
Current at 25 ° C - continuous drain (Id) | 1.5A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 4.5 옴 @ 400mA,10V |
Vgs (th) (maximum) for different Ids | 3.5V @ 200µA |
Gate charge (Qg) at different Vgs (maximum) | 4 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 80 pF @ 500 V |
FET function | Grade knot |
Power dissipation (maximum) | 13W(Tc) |