Installation type | Surface mount |
packing | TR,CT,bulk |
series | HEXFET®, StrongIRFET™ |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-PQFN(5x6) |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 43A(Ta),100A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 1.1 mΩ @ 50A,10V |
Vgs (th) (maximum) for different Ids | 2.2V @ 150µA |
Gate charge (Qg) at different Vgs (maximum) | 179 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 7736 pF @ 24 V |
FET function | - |
Power dissipation (maximum) | 3.7W(Ta),156W(Tc) |