ISC0805NLSATMA1
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ISC0805NLSATMA1
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ISC0805NLSATMA1

Brand:Infineon
Model:ISC0805NLSATMA1
stock:1095
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥2.90
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series OptiMOS™ 5
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TDSON-8-46
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 13A(Ta),71A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 7.8 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 2.3V @ 40µA
Gate charge (Qg) at different Vgs (maximum) 33 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2200 pF @ 50 V
FET function -
Power dissipation (maximum) 2.5W(Ta),74W(Tc)
Common problem
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