IPB330P10NMATMA1
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IPB330P10NMATMA1
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IPB330P10NMATMA1

Brand:Infineon
Model:IPB330P10NMATMA1
stock:16000
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥8.00
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 6.9A(Ta), 62A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 33 mΩ @ 53A, 10V
Vgs (th) (maximum) for different Ids 4V @ 5.55mA
Gate charge (Qg) at different Vgs (maximum) 236 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 11000 pF @ 50 V
FET function -
Power dissipation (maximum) 3.8W(Ta),300W(Tc)
Common problem
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