Installation type | Surface mount |
packing | TR,CT |
series | CoolSiC™ |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PG-TO263-7-12 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 1200 V |
Current at 25 ° C - continuous drain (Id) | 4.7A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | - |
On resistance (maximum) for different Ids and Vgs | 468 mΩ @ 2A,18V |
Vgs (th) (maximum) for different Ids | 5.7V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 5.9 nC @ 18 V |
Vgs (max) | +18V,-15V |
Input capacitance at different Vds (Ciss) (maximum) | 196 pF @ 800 V |
FET function | standard |
Power dissipation (maximum) | 65W(Tc) |