IMBG120R350M1HXTMA1
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likeIMBG120R350M1HXTMA1
Brand：Infineon
Model：IMBG120R350M1HXTMA1
stock：33617
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥9.74
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Common problem
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| Installation type | Surface mount |
| packing | TR,CT |
| series | CoolSiC™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO263-7-12 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 4.7A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | - |
| On resistance (maximum) for different Ids and Vgs | 468 mΩ @ 2A,18V |
| Vgs (th) (maximum) for different Ids | 5.7V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 5.9 nC @ 18 V |
| Vgs (max) | +18V,-15V |
| Input capacitance at different Vds (Ciss) (maximum) | 196 pF @ 800 V |
| FET function | standard |
| Power dissipation (maximum) | 65W(Tc) |
Common problem
Industry trends
DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
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