Installation type | Through-Hole |
packing | pipe |
series | CoolSiC™ |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PG-TO247-3-41 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 650 V |
Current at 25 ° C - continuous drain (Id) | 58A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
On resistance (maximum) for different Ids and Vgs | 42 mΩ @ 29.5A,18V |
Vgs (th) (maximum) for different Ids | 5.7V @ 8.8mA |
Gate charge (Qg) at different Vgs (maximum) | 48 nC @ 18 V |
Vgs (max) | +20V,-2V |
Input capacitance at different Vds (Ciss) (maximum) | 1643 pF @ 400 V |
FET function | - |
Power dissipation (maximum) | 197W(Tc) |