IAUZ40N08S5N100ATMA1
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IAUZ40N08S5N100ATMA1
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IAUZ40N08S5N100ATMA1

Brand:Infineon
Model:IAUZ40N08S5N100ATMA1
stock:14037
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.85
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series Automotive, AEC-Q101, OptiMOS™-5
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TDSON-8
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 80 V
Current at 25 ° C - continuous drain (Id) 40A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
On resistance (maximum) for different Ids and Vgs 10 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 3.8V @ 27µA
Gate charge (Qg) at different Vgs (maximum) 24.2 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1591 pF @ 40 V
FET function -
Power dissipation (maximum) 68W(Tc)
Common problem
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