BSC084P03NS3EGATMA1
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likeBSC084P03NS3EGATMA1
Brand：Infineon
Model：BSC084P03NS3EGATMA1
stock：2316
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥0.45
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | OptiMOS™ |
| Part status | Not applicable to new design |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-TDSON-8-5 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 14.9A(Ta),78.6A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 6V,10V |
| On resistance (maximum) for different Ids and Vgs | 8.4 mΩ @ 50A,10V |
| Vgs (th) (maximum) for different Ids | 3V @ 110µA |
| Gate charge (Qg) at different Vgs (maximum) | 57.7 nC @ 10 V |
| Vgs (max) | ±25V |
| Input capacitance at different Vds (Ciss) (maximum) | 4240 pF @ 15 V |
| FET function | - |
| Power dissipation (maximum) | 2.5W(Ta),69W(Tc) |
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