Installation type | Through-Hole |
packing | bulk,pipe |
series | OptiMOS™ |
Part status | Not applicable to new design |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PG-TO262-3 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 150 V |
Current at 25 ° C - continuous drain (Id) | 21A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 8V,10V |
On resistance (maximum) for different Ids and Vgs | 53 mΩ @ 18A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 35µA |
Gate charge (Qg) at different Vgs (maximum) | 12 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 887 pF @ 75 V |
FET function | - |
Power dissipation (maximum) | 68W(Tc) |