Installation type | Surface mount |
packing | TR |
series | OptiMOS™ |
Part status | Not applicable to new design |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | PG-TDSON-8-1 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 30A(Ta),100A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4.5V |
On resistance (maximum) for different Ids and Vgs | 1.95 mΩ @ 50A,4.5V |
Vgs (th) (maximum) for different Ids | 1.2V @ 350µA |
Gate charge (Qg) at different Vgs (maximum) | 85 nC @ 4.5 V |
Vgs (max) | ±12V |
Input capacitance at different Vds (Ciss) (maximum) | 13000 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 2.8W(Ta),104W(Tc) |