BSC019N02KSGAUMA1
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BSC019N02KSGAUMA1
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BSC019N02KSGAUMA1

Brand:Infineon
Model:BSC019N02KSGAUMA1
stock:17414
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.78
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Installation type Surface mount
packing TR
series OptiMOS™
Part status Not applicable to new design
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TDSON-8-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 30A(Ta),100A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 1.95 mΩ @ 50A,4.5V
Vgs (th) (maximum) for different Ids 1.2V @ 350µA
Gate charge (Qg) at different Vgs (maximum) 85 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 13000 pF @ 10 V
FET function -
Power dissipation (maximum) 2.8W(Ta),104W(Tc)
Common problem
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