IPT65R105G7XTMA1
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IPT65R105G7XTMA1
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IPT65R105G7XTMA1

Brand:Infineon
Model:IPT65R105G7XTMA1
stock:60851
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥10.27
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Installation type Surface mount
packing TR,CT
series CoolMOS™ C7
Part status Final sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-HSOF-8-2
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 24A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 105 mΩ @ 8.9A,10V
Vgs (th) (maximum) for different Ids 4V @ 440µA
Gate charge (Qg) at different Vgs (maximum) 35 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1670 pF @ 400 V
FET function -
Power dissipation (maximum) 156W(Tc)
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