BSZ0602LSATMA1
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BSZ0602LSATMA1
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BSZ0602LSATMA1

Brand:Infineon
Model:BSZ0602LSATMA1
stock:83454
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series OptiMOS™ 5
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TDSON-8 FL
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 80 V
Current at 25 ° C - continuous drain (Id) 13A(Ta),40A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 7 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2.3V @ 36µA
Gate charge (Qg) at different Vgs (maximum) 18 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2340 pF @ 40 V
FET function -
Power dissipation (maximum) 69W(Tc)
Common problem
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