Installation type | Surface mount |
packing | TR |
series | HEXFET® |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-223 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 55 V |
Current at 25 ° C - continuous drain (Id) | 2A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
On resistance (maximum) for different Ids and Vgs | 140 mΩ @ 2A,10V |
Vgs (th) (maximum) for different Ids | 2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 14 nC @ 10 V |
Vgs (max) | ±16V |
Input capacitance at different Vds (Ciss) (maximum) | 230 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 1W(Ta) |