Installation type | Surface mount |
packing | pipe |
series | HEXFET® |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | Micro6™(SOT23-6) |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 6.5A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4.5V |
On resistance (maximum) for different Ids and Vgs | 30 mΩ @ 6.5A,4.5V |
Vgs (th) (maximum) for different Ids | 1.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 22 nC @ 5 V |
Vgs (max) | ±12V |
Input capacitance at different Vds (Ciss) (maximum) | 1310 pF @ 15 V |
FET function | - |
Power dissipation (maximum) | 2W(Ta) |