IRFI9530N
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IRFI9530N
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IRFI9530N

Brand:Infineon
Model:IRFI9530N
stock:92342
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Through-Hole
packing pipe
series HEXFET®
Part status stop production
working temperature -
Encapsulation/Housing TO-220AB Whole package
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 7.7A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 300 mΩ @ 4.6A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 38 nC @ 10 V
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) 860 pF @ 25 V
FET function -
Power dissipation (maximum) -
Common problem
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