IRL5602L
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IRL5602L
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IRL5602L

Brand:Infineon
Model:IRL5602L
stock:99299
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Through-Hole
packing pipe
series HEXFET®
Part status stop production
working temperature -
Encapsulation/Housing TO-262
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 24A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 42 mΩ @ 12A,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 44 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 1460 pF @ 15 V
FET function -
Power dissipation (maximum) -
Common problem
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