Installation type | Through-Hole |
packing | pipe |
series | HEXFET® |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | TO-220AB |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 24A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.5V,4.5V |
On resistance (maximum) for different Ids and Vgs | 42 mΩ @ 12A,4.5V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 44 nC @ 4.5 V |
Vgs (max) | ±8V |
Input capacitance at different Vds (Ciss) (maximum) | 1460 pF @ 15 V |
FET function | - |
Power dissipation (maximum) | - |