IRFM460
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IRFM460
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IRFM460

Brand:Infineon
Model:IRFM460
stock:79868
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing bag
series HEXFET®
Part status stop production
working temperature -
Encapsulation/Housing TO-254AA
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 500 V
Current at 25 ° C - continuous drain (Id) 19A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 270 mΩ @ 12A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 190 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4300 pF @ 25 V
FET function -
Power dissipation (maximum) 250W(Tc)
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