IRL3502PBF
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IRL3502PBF
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IRL3502PBF

Brand:Infineon
Model:IRL3502PBF
stock:13722
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-220AB
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 110A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,7V
On resistance (maximum) for different Ids and Vgs 7 mΩ @ 64A,7V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 110 nC @ 4.5 V
Vgs (max) ±10V
Input capacitance at different Vds (Ciss) (maximum) 4700 pF @ 15 V
FET function -
Power dissipation (maximum) 140W(Tc)
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