IRF7353D1TRPBF
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IRF7353D1TRPBF
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IRF7353D1TRPBF

Brand:Infineon
Model:IRF7353D1TRPBF
stock:52265
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series FETKY™
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SO
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 6.5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 32 mΩ @ 5.8A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 33 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 650 pF @ 25 V
FET function Schottky diode (isolated)
Power dissipation (maximum) 2W(Ta)
Common problem
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