BSS123L6433HTMA1
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BSS123L6433HTMA1
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BSS123L6433HTMA1

Brand:Infineon
Model:BSS123L6433HTMA1
stock:20440
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series SIPMOS®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-SOT23
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 170mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 6 Ω @ 170mA,10V
Vgs (th) (maximum) for different Ids 1.8V @ 50µA
Gate charge (Qg) at different Vgs (maximum) 2.67 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 69 pF @ 25 V
FET function -
Power dissipation (maximum) 360mW(Ta)
Common problem
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