Installation type | Surface mount |
packing | pipe |
series | HEXFET® |
Part status | On sale |
working temperature | - |
Encapsulation/Housing | 8-SO |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 8.3A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V |
On resistance (maximum) for different Ids and Vgs | 25 mΩ @ 7A,4.5V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 17 nC @ 5 V |
Vgs (max) | ±12V |
Input capacitance at different Vds (Ciss) (maximum) | - |
FET function | - |
Power dissipation (maximum) | 2.5W(Tc) |