BSP317PE6327T
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BSP317PE6327T
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BSP317PE6327T

Brand:Infineon
Model:BSP317PE6327T
stock:18642
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series SIPMOS®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-SOT223-4
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 250 V
Current at 25 ° C - continuous drain (Id) 430mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4 Ω @ 430mA,10V
Vgs (th) (maximum) for different Ids 2V @ 370µA
Gate charge (Qg) at different Vgs (maximum) 15.1 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 262 pF @ 25 V
FET function -
Power dissipation (maximum) 1.8W(Ta)
Common problem
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