BUZ31 E3046
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BUZ31 E3046
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BUZ31 E3046

Brand:Infineon
Model:BUZ31 E3046
stock:38592
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing TR
series SIPMOS®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TO262-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 200 V
Current at 25 ° C - continuous drain (Id) 14.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V
On resistance (maximum) for different Ids and Vgs 200 mΩ @ 9A,5V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1120 pF @ 25 V
FET function -
Power dissipation (maximum) 95W(Tc)
Common problem
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