IPB06N03LA G
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IPB06N03LA G
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IPB06N03LA G

Brand:Infineon
Model:IPB06N03LA G
stock:56546
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-3-2
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 25 V
Current at 25 ° C - continuous drain (Id) 50A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 5.9 mΩ @ 30A,10V
Vgs (th) (maximum) for different Ids 2V @ 40µA
Gate charge (Qg) at different Vgs (maximum) 22 nC @ 5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2653 pF @ 15 V
FET function -
Power dissipation (maximum) 83W(Tc)
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