Installation type | Through-Hole |
packing | pipe |
series | HEXFET® |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | TO-262 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 200 V |
Current at 25 ° C - continuous drain (Id) | 16A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 170 mΩ @ 9.8A,10V |
Vgs (th) (maximum) for different Ids | 5.5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 50 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 1100 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 3.8W(Ta),140W(Tc) |