BSC059N03S G
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BSC059N03S G
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BSC059N03S G

Brand:Infineon
Model:BSC059N03S G
stock:14708
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series OptiMOS™
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TDSON-8-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 17.5A(Ta),73A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 5.5 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 2V @ 35µA
Gate charge (Qg) at different Vgs (maximum) 21 nC @ 5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2670 pF @ 15 V
FET function -
Power dissipation (maximum) 17.5W(Ta),48W(Tc)
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