IPB110N06L G
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likeIPB110N06L G
Brand：Infineon
Model：IPB110N06L G
stock：28768
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | CT |
| series | - |
| Part status | stop production |
| working temperature | - |
| Encapsulation/Housing | PG-TO263-3-2 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 78A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | - |
| On resistance (maximum) for different Ids and Vgs | 11 mΩ @ 78A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 94µA |
| Gate charge (Qg) at different Vgs (maximum) | 79 nC @ 10 V |
| Vgs (max) | - |
| Input capacitance at different Vds (Ciss) (maximum) | 2700 pF @ 30 V |
| FET function | - |
| Power dissipation (maximum) | - |
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