SPD18P06P
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SPD18P06P
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SPD18P06P

Brand:Infineon
Model:SPD18P06P
stock:51140
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.47
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
series SIPMOS®
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 18.6A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 130 mΩ @ 13.2A,10V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 33 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 860 pF @ 25 V
FET function -
Power dissipation (maximum) 80W(Tc)
Common problem
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