IRF7521D1PBF
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IRF7521D1PBF
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IRF7521D1PBF

Brand:Infineon
Model:IRF7521D1PBF
stock:39857
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing pipe
series FETKY™
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing Micro8™
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 2.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.7V,4.5V
On resistance (maximum) for different Ids and Vgs 135 mΩ @ 1.7A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 8 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 260 pF @ 15 V
FET function Schottky diode (isolated)
Power dissipation (maximum) 1.3W(Ta)
Common problem
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